Title :
Nanotube memories for space applications
Author :
Lovellette, M.N. ; Campbell, A.B. ; Hughes, H.L. ; Lawerence, R.K. ; Ward, J.W. ; Meinhold, M. ; Bengtson, T.R. ; Carleton, G.F. ; Segal, B.M. ; Rueckes, T.
Author_Institution :
Naval Res. Lab., Washington, DC, USA
Abstract :
The radiation hardness characteristics of nano-electromechanical single-walled carbon nanotube (SWNT) memory elements has been studied. The NRAM bits have been exposed to 100 krad, 1 Mrad and 10 Mrad of gamma-radiation. Initial test results indicate that NRAM is an extremely radiation hard memory.
Keywords :
carbon nanotubes; gamma-ray effects; nanotube devices; radiation hardening (electronics); random-access storage; space vehicle electronics; C; SWNT; gamma radiation effect; nanoelectromechanical elements; nanotube RAM technology; nanotube memory devices; radiation hard memory; single walled carbon nanotube memory elements; space applications; CMOS technology; Capacitors; Carbon nanotubes; Chemical elements; Electrodes; Nonvolatile memory; Radiation hardening; Random access memory; Read-write memory; Testing;
Conference_Titel :
Aerospace Conference, 2004. Proceedings. 2004 IEEE
Print_ISBN :
0-7803-8155-6
DOI :
10.1109/AERO.2004.1368024
