• DocumentCode
    2108853
  • Title

    Characterization and large signal modeling of InP HEMT devices

  • Author

    Bengtsson, Lars ; Garcia, Mikael ; Karisson, Christer ; Rorsman, Niklas ; Zirath, Herbert ; Angelov, Litcho

  • Author_Institution
    Department of Microwave Technology, Chalmers University of Technology, S-412 96 Göteborg, Sweden
  • Volume
    2
  • fYear
    1995
  • fDate
    4-4 Sept. 1995
  • Firstpage
    1168
  • Lastpage
    1172
  • Abstract
    Some recent modeling results of Chalmers manufactured InP HEMT devices are presented in this paper. Device models and measurements as well as comparison to simulation programs are studied. The equivalent circuit and large signal model are verified by comparing measurements and computer simulations for DC characteristics, S-parameters and power spectrum.
  • Keywords
    Circuit simulation; Computational modeling; Computer simulation; Equivalent circuits; HEMTs; Indium phosphide; Power measurement; Pulp manufacturing; Scattering parameters; Virtual manufacturing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 1995. 25th European
  • Conference_Location
    Bologna, Italy
  • Type

    conf

  • DOI
    10.1109/EUMA.1995.337148
  • Filename
    4137362
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2108853