• DocumentCode
    2108858
  • Title

    Consistent Quantitative Models For The Coupled Diffusion Of Dopants And Point Defects In Silicon

  • Author

    Dunham, S.T.

  • Author_Institution
    Boston University
  • fYear
    1993
  • fDate
    14-15 May 1993
  • Firstpage
    46
  • Lastpage
    49
  • Keywords
    Differential equations; Doping profiles; Ionization; Photonic band gap; Semiconductor process modeling; Silicon; Solid modeling; Spontaneous emission; Systems engineering and theory; Testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Process and Device Modeling, 1993. (1993 VPAD) 1993 International Workshop on
  • Print_ISBN
    0-7803-1338-0
  • Type

    conf

  • DOI
    10.1109/VPAD.1993.724717
  • Filename
    724717
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2108858