Title :
Consistent Quantitative Models For The Coupled Diffusion Of Dopants And Point Defects In Silicon
Author_Institution :
Boston University
Keywords :
Differential equations; Doping profiles; Ionization; Photonic band gap; Semiconductor process modeling; Silicon; Solid modeling; Spontaneous emission; Systems engineering and theory; Testing;
Conference_Titel :
VLSI Process and Device Modeling, 1993. (1993 VPAD) 1993 International Workshop on
Print_ISBN :
0-7803-1338-0
DOI :
10.1109/VPAD.1993.724717
