Title :
SPICE macro models for annular MOSFETs
Author :
Strohbehn, Kim ; Martin, Mark N.
Author_Institution :
Appl. Phys. Lab., Johns Hopkins Univ., Laurel, MD, USA
Abstract :
MOSFETs with annular, or enclosed, geometries are now finding frequent use in rad-hard by design (RHBD) approaches to designing custom CMOS ASICs for aerospace applications. Unfortunately, these devices are not accurately modeled by the BSIM3 models normally provided for devices with ordinary rectangular gates. We present a SPICE macro model for an annular n-channel MOSFET to account for the annular geometry effects on gate overlap capacitance and output conductance.
Keywords :
CMOS integrated circuits; MOSFET; SPICE; application specific integrated circuits; capacitance; electric admittance; radiation hardening (electronics); semiconductor device models; space vehicle electronics; BSIM3 models; CMOS ASIC design; SPICE macromodel; aerospace applications; annular geometry effects; annular n-channel MOSFET; conductance; gate overlap capacitance; radiation hardening; rectangular gates; CMOS process; Circuits; Costs; Geometry; MOSFETs; Radiation hardening; SPICE; Semiconductor device modeling; Single event upset; Solid modeling;
Conference_Titel :
Aerospace Conference, 2004. Proceedings. 2004 IEEE
Print_ISBN :
0-7803-8155-6
DOI :
10.1109/AERO.2004.1368031
