Title :
A trimmable precision bandgap voltage reference on 180 nm CMOS
Author :
Timm, Steven ; Wickmann, Andreas
Author_Institution :
eesy-ic GmbH, Nuremberg, Germany
Abstract :
For the operation of a successive approximation register analog-to-digital converter, an integrated reference voltage source is required. This reference has to be stable and has to have high precision. Therefore, trim mechanisms for the achievement of optimal accuracy and minimum temperature drift behavior are necessary. Generally, Kuijk and Brokaw bandgap reference topologies are suitable for these requirements. The Kuijk bandgap reference has typically a very good power supply rejection ratio (PSRR). But adequate noise performance and temperature drift behavior cause relatively high current and area consumption. In contrast to the Kuijk topology, the Brokaw reference circuit has better noise performance and temperature drift at a lower quiescent current. Depending on the topology, the Brokaw reference normally has lower PSRR. For implementation, the Brokaw reference has been chosen. It has a nominal output voltage of 1.25 V with an absolute accuracy of 600 μV after trimming. The temperature drift in the range of ̅-55°C to 125°C is typical 22.8 ppm/°C. The DC power supply rejection ratio (PSRR) is more than 84dB over all relevant corners. The minimum power supply rejection ratio is 59dB at approximately 1 MHz. The overall current consumption at ambient temperature is maximal 59 μA.
Keywords :
CMOS integrated circuits; analogue-digital conversion; Brokaw reference circuit; CMOS; DC power supply rejection ratio; Kuijk bandgap reference; Kuijk topology; PSRR; analog-to-digital converter; current 59 muA; frequency 1 MHz; integrated reference voltage source; size 180 nm; successive approximation register; temperature -55 C to 125 C; trim mechanism; trimmable precision bandgap voltage reference; voltage 1.25 V; voltage 600 muV; Computer architecture; Noise; Photonic band gap; Power supplies; Temperature dependence; Topology; Transistors;
Conference_Titel :
Semiconductor Conference Dresden-Grenoble (ISCDG), 2013 International
Conference_Location :
Dresden
Print_ISBN :
978-1-4799-1250-6
DOI :
10.1109/ISCDG.2013.6656292