Title :
A Physics-based Model For Transient Diffusion Of Dopants In Si
Author_Institution :
Philips Research Laboratories
Keywords :
Annealing; Electrons; Furnaces; Implants; Ion implantation; Laboratories; Predictive models; Robustness; Semiconductor process modeling; Silicon;
Conference_Titel :
VLSI Process and Device Modeling, 1993. (1993 VPAD) 1993 International Workshop on
Print_ISBN :
0-7803-1338-0
DOI :
10.1109/VPAD.1993.724718
