DocumentCode :
2109070
Title :
A Physics-based Model For Transient Diffusion Of Dopants In Si
Author :
Cowern, N.E.B.
Author_Institution :
Philips Research Laboratories
fYear :
1993
fDate :
14-15 May 1993
Firstpage :
50
Lastpage :
51
Keywords :
Annealing; Electrons; Furnaces; Implants; Ion implantation; Laboratories; Predictive models; Robustness; Semiconductor process modeling; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Process and Device Modeling, 1993. (1993 VPAD) 1993 International Workshop on
Print_ISBN :
0-7803-1338-0
Type :
conf
DOI :
10.1109/VPAD.1993.724718
Filename :
724718
Link To Document :
بازگشت