A low-noise energy-efficient inductor-less 50 Gbit/s transimpedance amplifier with high gain-bandwidth product in 0.13 µm SiGe BiCMOS

Author

Schoeniger, David ; Henker, R. ; Schumann, S. ; Ellinger, F.

Author_Institution

Circuit Design & Network Theor., Dresden Univ. of Technol., Dresden, Germany

fYear

2013

fDate

26-27 Sept. 2013

Firstpage

1

Lastpage

5

Abstract

A 50 Gbit/s transimpedance amplifier input stage implemented in a 0.13 μm SiGe BiCMOS technology with high gain-bandwidth product, high energy efficiency and low noise is presented. The amplifier is designed to act as an input stage of an integrated receiver front-end. The circuit consists of a low stage count topology and achieves a high transimpedance over a large bandwidth without applying area consuming peaking inductors. Measurements of the fabricated chip show a forward gain of more than 16 dB and a transimpedance gain of 53.5 dBΩ over a bandwidth of 35 GHz. The circuit consumes a power of less than 14 mW from a 3.3 V supply and requires a chip area of only 0.158 mm² including pads.

Keywords

BiCMOS analogue integrated circuits; Ge-Si alloys; energy conservation; low-power electronics; network topology; operational amplifiers; BiCMOS technology; SiGe; amplifier design; bandwidth 35 GHz; bit rate 50 Gbit/s; energy efficiency; gain-bandwidth product; integrated receiver front-end; low stage count topology; low-noise energy-efficient inductorless transimpedance amplifier; size 0.13 mum; transimpedance gain; voltage 3.3 V; Bandwidth; BiCMOS integrated circuits; Gain; Impedance; Noise; Receivers; Silicon germanium; BiCMOS; SiGe; optical communication; optoelectronic integrated circuit; transimpedance amplifier (TIA);

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference Dresden-Grenoble (ISCDG), 2013 International

Conference_Location

Dresden

Print_ISBN

978-1-4799-1250-6

Type

conf

DOI

10.1109/ISCDG.2013.6656296

Filename

6656296