Title :
A millimeter wave quad-phase ring oscillator using 0.13 µm SiGe BiCMOS HBT technology
Author :
Ali, Usman ; Thiede, A.
Author_Institution :
Dept. of High Freq. Electron., Univ. of Paderborn, Paderborn, Germany
Abstract :
A millimeter wave quad-phase differential voltage-controlled oscillator (VCO) suitable for multi-gigabit communication systems is presented in a 0.13 μm SiGe BiCMOS HBT technology. The oscillation frequency is intended to be above 160 GHz. The circuit occupies active area of less than 0.51 mm2 (690 μm × 730 μm). It operates on a dual power supply (Vcc = 4.5 V and Vee = -1.1 V) and dissipates not more than 110 mW of power per stage of the ring oscillator. The simulation results show that oscillation frequency is tunable from 173 to 182.8 GHz.
Keywords :
BiCMOS analogue integrated circuits; Ge-Si alloys; bipolar MIMIC; field effect MIMIC; heterojunction bipolar transistors; millimetre wave oscillators; semiconductor materials; voltage-controlled oscillators; BiCMOS HBT technology; SiGe; VCO; frequency 173 GHz to 182.8 GHz; millimeter wave quad-phase ring oscillator; millimeter wave quadphase differential voltage-controlled oscillator; multigigabit communication systems; size 0.13 mum; voltage -1.1 V; voltage 4.5 V; Delays; Heterojunction bipolar transistors; Ring oscillators; Silicon germanium; Voltage control; Voltage-controlled oscillators; Heterojunction bipolar transistor (HBT); Millimeter wave integrated circuits; Silicon Germanium (SiGe); quadrature ring oscillator; voltage-controlled oscillator (VCO);
Conference_Titel :
Semiconductor Conference Dresden-Grenoble (ISCDG), 2013 International
Conference_Location :
Dresden
Print_ISBN :
978-1-4799-1250-6
DOI :
10.1109/ISCDG.2013.6656297
