Temperature sensitivity modeling of pn-junction diodes for microbolometer-based thermal imaging applications

Author

Utermohlen, Fabian ; Herrmann, Ingo ; Etter, Daniel B. ; Shen Hue Sun ; Burghartz, Joachim

Author_Institution

Corp. Sector Res. & Adv. Eng., Robert Bosch GmbH, Gerlingen-Schillerhöhe, Germany

fYear

2013

fDate

26-27 Sept. 2013

Firstpage

1

Lastpage

4

Abstract

A model for the electrical behavior of pn-junction diodes biased in forward direction and used as a temperature sensitive device (TSD) in microbolometers is presented. It is based on the well-known Shockley equation extended by the ideality factor m. We demonstrate that the largest temperature sensitivity can be reached for diodes at low current density operation featuring a high ideality factor m > 1.

Keywords

bolometers; infrared imaging; semiconductor diodes; temperature sensors; Shockley equation; TSD; electrical behavior; forward direction; microbolometer based thermal imaging applications; microbolometers; pn-junction diodes; temperature sensitive device; temperature sensitivity modeling; Current measurement; Mathematical model; Sensitivity; Silicon; Temperature; Temperature measurement; Temperature sensors; Microbolometer; compact modeling; ideality factor; pn-junction diode; temperature sensitivity; thermal imaging;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference Dresden-Grenoble (ISCDG), 2013 International

Conference_Location

Dresden

Print_ISBN

978-1-4799-1250-6

Type

conf

DOI

10.1109/ISCDG.2013.6656299

Filename

6656299