Title :
Temperature sensitivity modeling of pn-junction diodes for microbolometer-based thermal imaging applications
Author :
Utermohlen, Fabian ; Herrmann, Ingo ; Etter, Daniel B. ; Shen Hue Sun ; Burghartz, Joachim
Author_Institution :
Corp. Sector Res. & Adv. Eng., Robert Bosch GmbH, Gerlingen-Schillerhöhe, Germany
Abstract :
A model for the electrical behavior of pn-junction diodes biased in forward direction and used as a temperature sensitive device (TSD) in microbolometers is presented. It is based on the well-known Shockley equation extended by the ideality factor m. We demonstrate that the largest temperature sensitivity can be reached for diodes at low current density operation featuring a high ideality factor m > 1.
Keywords :
bolometers; infrared imaging; semiconductor diodes; temperature sensors; Shockley equation; TSD; electrical behavior; forward direction; microbolometer based thermal imaging applications; microbolometers; pn-junction diodes; temperature sensitive device; temperature sensitivity modeling; Current measurement; Mathematical model; Sensitivity; Silicon; Temperature; Temperature measurement; Temperature sensors; Microbolometer; compact modeling; ideality factor; pn-junction diode; temperature sensitivity; thermal imaging;
Conference_Titel :
Semiconductor Conference Dresden-Grenoble (ISCDG), 2013 International
Conference_Location :
Dresden
Print_ISBN :
978-1-4799-1250-6
DOI :
10.1109/ISCDG.2013.6656299
