Title :
Sensitivity of class-E power amplifier performance to individual transistor model parameters
Author :
Krause, Jan ; Wittkopf, H. ; Schroter, Michael ; Sinha, S. ; Weststrate, M.
Author_Institution :
CEDIC, Dresden Univ. of Technol., Dresden, Germany
Abstract :
The overall purpose of this paper is the investigation of the impact of individual transistor parameters on the most important class-E power amplifier performance characteristics. The very advanced and physics-based compact model HICUM/L2 v2.22 was used. The changes in power added efficiency and transducer power gain provide insight about how sensitive the circuit is to inaccuracies in model parameter determination. In order to cover possible correlations between model parameters, a statistical analysis using numerical device simulation was performed as well.
Keywords :
power amplifiers; semiconductor device models; statistical analysis; transistors; class-E power amplifier; physics-based compact model HICUM/L2 v2.22; power added efficiency; statistical analysis; transducer power gain; transistor model parameter; Capacitance; Doping; Integrated circuit modeling; Numerical models; Power amplifiers; Semiconductor process modeling; Transistors; HICUM; class-E power amplifier; parameter variations; semiconductor device modelling;
Conference_Titel :
Semiconductor Conference Dresden-Grenoble (ISCDG), 2013 International
Conference_Location :
Dresden
Print_ISBN :
978-1-4799-1250-6
DOI :
10.1109/ISCDG.2013.6656300
