Title :
Compact modeling of nano-scale trapezoidal cross-sectional FinFETs
Author :
Fasarakis, N. ; Tassis, Dimitrios H. ; Tsormpatzoglou, A. ; Papathanasiou, Kostas ; Dimitriadis, C.A. ; Ghibaudo, Gerard
Author_Institution :
Dept. of Phys., Aristotle Univ. of Thessaloniki, Thessaloniki, Greece
Abstract :
Analytical compact model for the drain current and trans-capacitances of undoped or lightly doped nanoscale FinFETs with trapezoidal cross section is presented. The compact model of rectangular FinFETs is applied in trapezoidal FinFETs using the concept of the equivalent device parameters. The model is compared with the results of three-dimensional numerical device simulations. The overall results reveal the very good accuracy of the proposed compact model, making it suitable for circuit design simulation tools.
Keywords :
MOSFET; capacitance; nanoelectronics; semiconductor device models; semiconductor doping; analytical compact modeling; drain current; equivalent device parameters; lightly doped nanoscale FinFET; nanoscale trapezoidal cross-sectional FinFET; rectangular FinFET; three-dimensional numerical device simulations; transcapacitances; undoped nanoscale FinFET; FinFETs; Integrated circuit modeling; Logic gates; Numerical models; Semiconductor device modeling; Solid modeling; Compact modeling; drain current; trans-capacitances; trapezoidal FinFETs;
Conference_Titel :
Semiconductor Conference Dresden-Grenoble (ISCDG), 2013 International
Conference_Location :
Dresden
Print_ISBN :
978-1-4799-1250-6
DOI :
10.1109/ISCDG.2013.6656303
