Compact modeling of nano-scale trapezoidal cross-sectional FinFETs

Author

Fasarakis, N. ; Tassis, Dimitrios H. ; Tsormpatzoglou, A. ; Papathanasiou, Kostas ; Dimitriadis, C.A. ; Ghibaudo, Gerard

Author_Institution

Dept. of Phys., Aristotle Univ. of Thessaloniki, Thessaloniki, Greece

fYear

2013

fDate

26-27 Sept. 2013

Firstpage

1

Lastpage

4

Abstract

Analytical compact model for the drain current and trans-capacitances of undoped or lightly doped nanoscale FinFETs with trapezoidal cross section is presented. The compact model of rectangular FinFETs is applied in trapezoidal FinFETs using the concept of the equivalent device parameters. The model is compared with the results of three-dimensional numerical device simulations. The overall results reveal the very good accuracy of the proposed compact model, making it suitable for circuit design simulation tools.

Keywords

MOSFET; capacitance; nanoelectronics; semiconductor device models; semiconductor doping; analytical compact modeling; drain current; equivalent device parameters; lightly doped nanoscale FinFET; nanoscale trapezoidal cross-sectional FinFET; rectangular FinFET; three-dimensional numerical device simulations; transcapacitances; undoped nanoscale FinFET; FinFETs; Integrated circuit modeling; Logic gates; Numerical models; Semiconductor device modeling; Solid modeling; Compact modeling; drain current; trans-capacitances; trapezoidal FinFETs;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference Dresden-Grenoble (ISCDG), 2013 International

Conference_Location

Dresden

Print_ISBN

978-1-4799-1250-6

Type

conf

DOI

10.1109/ISCDG.2013.6656303

Filename

6656303