Silicon carbide electronic devices and integrated circuits for extreme environments

Author

Cooper, James A., Jr.

Author_Institution

Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA

Volume

4

fYear

2004

fDate

13-13 March 2004

Firstpage

2507

Abstract

Silicon carbide (SiC) is a wide bandgap semiconductor that is highly suited for operation in extreme environments, including high temperatures and high levels of radiation. Electronic-grade wafers of SiC first became commercially available in the early 1990´s, and since that time SiC electronic device technology has progressed rapidly. This work reviews the current status of electronic device technology in SiC and assess the prospects for applying this technology to operation in extreme environments.

Keywords

carrier density; electron-hole recombination; high-temperature electronics; monolithic integrated circuits; semiconductor device models; silicon compounds; thermal stability; wide band gap semiconductors; SiC; electronic device technology; high level radiation; high temperature environment; integrated circuits; silicon carbide electronic devices; wide bandgap semiconductor; Atomic measurements; CMOS technology; Fabrication; Integrated circuit technology; Lattices; Leakage current; Photonic band gap; Semiconductor materials; Silicon carbide; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Aerospace Conference, 2004. Proceedings. 2004 IEEE

Conference_Location

Big Sky, MT

ISSN

1095-323X

Print_ISBN

0-7803-8155-6

Type

conf

DOI

10.1109/AERO.2004.1368045

Filename

1368045