Trench isolated thick SOI process for various optical and high voltage devices

By using a trench isolated thick SOI process as base topology various optical and high voltage devices can be designed which are not or hardly possible in pn-junction isolated BCD processes. The trench isolation allows the construction of isolated photodiodes with excellent response even for red and infrared wavelengths. The thick SOI material enables the integration of vertical high voltage devices like NPN bipolar transistors. Together with a special collector design the buried layer and the sinker allow the integration of an IGBT device which is tune able between on-state and switching performance.