DocumentCode :
2109306
Title :
Dynamic-clustering And Grain-growth Kinetics Effects On Dopant Diffusion In Polysilicon
Author :
Hane, M. ; Hasegawa, S.
Author_Institution :
NEC Corporation
fYear :
1993
fDate :
14-15 May 1993
Firstpage :
52
Lastpage :
53
Keywords :
Annealing; Equations; Grain boundaries; Grain size; Kinetic theory; Microelectronics; Optical films; Semiconductor process modeling; Solid modeling; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Process and Device Modeling, 1993. (1993 VPAD) 1993 International Workshop on
Print_ISBN :
0-7803-1338-0
Type :
conf
DOI :
10.1109/VPAD.1993.724719
Filename :
724719
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2109306
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