Porous silicon based heterostructures: formation, properties, and application

Author

Bondarenko, V.P. ; Bondarenko, A.V. ; Dolgyi, L.N. ; Dorofeev, A.M. ; Kazuchits, N.M. ; Levchenko, V.I. ; Vorozov, N.N. ; Volchek, S.A. ; Troyanova, G.N. ; Yakovtseva, V.A.

Author_Institution

Dept. of Inf. & Radioelectron., Byelorussian State Univ., Minsk, Byelorussia

Volume

1

fYear

1996

fDate

9-12 Oct 1996

Firstpage

229

Abstract

The unique combination of perfect crystalline structure, developed surface, and high activity of porous silicon (PS) provides a real possibility for creation of different heterostuctures: GaAs/PS/Si, C/PS/Si, PbS/PS/Si, PS:Er/Si, Si/SiO₂/Si. The heterostructures were used for CMOS/SOI IC´s, light emitting and waveguiding components. PS was shown to provide integration of opto- and microelectronic components on Si wafer

Keywords

CMOS integrated circuits; elemental semiconductors; integrated optics; integrated optoelectronics; light emitting devices; optical waveguide components; porous materials; semiconductor heterojunctions; semiconductor-insulator-semiconductor structures; silicon; silicon-on-insulator; C-Si-Si; C/PS/Si; CMOS/SOI IC´s; GaAs-Si-Si; GaAs/PS/Si; PS:Er/Si; PbS-Si-Si; PbS/PS/Si; Si-SiO₂-Si; Si/SiO₂/Si; Si:Er-Si; component integration; crystalline structure; developed surface; heterostructures; light emitting and waveguiding components; microelectronic components; optoelectronic components; porous Si; waveguiding components; Conducting materials; Dielectric substrates; Erbium; Luminescence; Material storage; Optical buffering; Optical films; Oxidation; Silicon; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 1996., International

Conference_Location

Sinaia

Print_ISBN

0-7803-3223-7

Type

conf

DOI

10.1109/SMICND.1996.557349

Filename

557349