Title :
Porous silicon based heterostructures: formation, properties, and application
Author :
Bondarenko, V.P. ; Bondarenko, A.V. ; Dolgyi, L.N. ; Dorofeev, A.M. ; Kazuchits, N.M. ; Levchenko, V.I. ; Vorozov, N.N. ; Volchek, S.A. ; Troyanova, G.N. ; Yakovtseva, V.A.
Author_Institution :
Dept. of Inf. & Radioelectron., Byelorussian State Univ., Minsk, Byelorussia
Abstract :
The unique combination of perfect crystalline structure, developed surface, and high activity of porous silicon (PS) provides a real possibility for creation of different heterostuctures: GaAs/PS/Si, C/PS/Si, PbS/PS/Si, PS:Er/Si, Si/SiO2/Si. The heterostructures were used for CMOS/SOI IC´s, light emitting and waveguiding components. PS was shown to provide integration of opto- and microelectronic components on Si wafer
Keywords :
CMOS integrated circuits; elemental semiconductors; integrated optics; integrated optoelectronics; light emitting devices; optical waveguide components; porous materials; semiconductor heterojunctions; semiconductor-insulator-semiconductor structures; silicon; silicon-on-insulator; C-Si-Si; C/PS/Si; CMOS/SOI IC´s; GaAs-Si-Si; GaAs/PS/Si; PS:Er/Si; PbS-Si-Si; PbS/PS/Si; Si-SiO2-Si; Si/SiO2/Si; Si:Er-Si; component integration; crystalline structure; developed surface; heterostructures; light emitting and waveguiding components; microelectronic components; optoelectronic components; porous Si; waveguiding components; Conducting materials; Dielectric substrates; Erbium; Luminescence; Material storage; Optical buffering; Optical films; Oxidation; Silicon; Temperature;
Conference_Titel :
Semiconductor Conference, 1996., International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-3223-7
DOI :
10.1109/SMICND.1996.557349
