DocumentCode :
2109557
Title :
A New Method For Simulation Of Etching And Deposition Processes
Author :
Strasser, E. ; Wimmer, K. ; Selberherr, S.
Author_Institution :
Technical University of Vienna
fYear :
1993
fDate :
14-15 May 1993
Firstpage :
54
Lastpage :
55
Keywords :
Algebra; Anisotropic magnetoresistance; Etching; Geometry; Microelectronics; Morphological operations; Semiconductor device modeling; Spatial filters; Surface morphology; Surface topography;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Process and Device Modeling, 1993. (1993 VPAD) 1993 International Workshop on
Print_ISBN :
0-7803-1338-0
Type :
conf
DOI :
10.1109/VPAD.1993.724720
Filename :
724720
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2109557
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