Title :
HEMT test structure technology for fast on-wafer characterization of epitaxial GaN-on-Si material
Author :
Schuster, Martin ; Wachowiak, Andre ; Szabo, Norbert ; Jahn, Alexander ; Merkel, U. ; Ruf, Andreas ; Mikolajick, Thomas ; Murad, Sohail ; Hu, Chuanmin ; Groh, L. ; Lutgen, S.
Author_Institution :
NaMLab gGmbH Dresden, Dresden, Germany
Abstract :
This work presents a HEMT test structure technology which is developed for fast on-wafer characterization of 150mm epitaxial GaN-on-Si material. The test structures allow for extraction of key device and GaN-based material parameter. Information on wafer homogeneity can be obtained via wafer maps. This technology is suitable and essential to evaluate different MOCVD growth conditions on device properties in short time and, hence, significantly accelerates the growth development towards the desired material quality for GaN-based high power electronic products.
Keywords :
III-V semiconductors; MOCVD; gallium compounds; high electron mobility transistors; power electronics; silicon; wide band gap semiconductors; GaN; HEMT test structure technology; MOCVD growth conditions; Si; epitaxial GaN-on-Si material; growth development; high power electronic products; on-wafer characterization; size 150 mm; test structures; wafer homogeneity; wafer maps; Electric breakdown; Electrical resistance measurement; Gallium nitride; HEMTs; Logic gates; Silicon; AlGaN/GaN; GaN growth; GaN on Si; HEMT; MOCVD; buffer breakdown; epitaxial GaN; high power; wafer map;
Conference_Titel :
Semiconductor Conference Dresden-Grenoble (ISCDG), 2013 International
Conference_Location :
Dresden
Print_ISBN :
978-1-4799-1250-6
DOI :
10.1109/ISCDG.2013.6656315
