HEMT test structure technology for fast on-wafer characterization of epitaxial GaN-on-Si material

Author

Schuster, Martin ; Wachowiak, Andre ; Szabo, Norbert ; Jahn, Alexander ; Merkel, U. ; Ruf, Andreas ; Mikolajick, Thomas ; Murad, Sohail ; Hu, Chuanmin ; Groh, L. ; Lutgen, S.

Author_Institution

NaMLab gGmbH Dresden, Dresden, Germany

fYear

2013

fDate

26-27 Sept. 2013

Firstpage

1

Lastpage

3

Abstract

This work presents a HEMT test structure technology which is developed for fast on-wafer characterization of 150mm epitaxial GaN-on-Si material. The test structures allow for extraction of key device and GaN-based material parameter. Information on wafer homogeneity can be obtained via wafer maps. This technology is suitable and essential to evaluate different MOCVD growth conditions on device properties in short time and, hence, significantly accelerates the growth development towards the desired material quality for GaN-based high power electronic products.

Keywords

III-V semiconductors; MOCVD; gallium compounds; high electron mobility transistors; power electronics; silicon; wide band gap semiconductors; GaN; HEMT test structure technology; MOCVD growth conditions; Si; epitaxial GaN-on-Si material; growth development; high power electronic products; on-wafer characterization; size 150 mm; test structures; wafer homogeneity; wafer maps; Electric breakdown; Electrical resistance measurement; Gallium nitride; HEMTs; Logic gates; Silicon; AlGaN/GaN; GaN growth; GaN on Si; HEMT; MOCVD; buffer breakdown; epitaxial GaN; high power; wafer map;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference Dresden-Grenoble (ISCDG), 2013 International

Conference_Location

Dresden

Print_ISBN

978-1-4799-1250-6

Type

conf

DOI

10.1109/ISCDG.2013.6656315

Filename

6656315