Analysis and optimization of program disturb in split-gate cells using source side injection and impact on further cell size reduction

Program disturb is a major issue limiting the functionality of hot carrier programmed flash memories. This paper reports a detailed characterization of program disturb in a split-gate flash memory cell using source side injection programming. Key parameters influencing the cell´s disturb sensitivity have been investigated, empirical models have been developed and a physical root cause has been identified. Conclusions for cell operation and cell size reduction capabilities are drawn.