• DocumentCode
    2109708
  • Title

    Resistive switching in thermally oxidized titanium films

  • Author

    Blaschke, Daniel ; Zahn, Peter ; Skorupa, Ilona ; Scheumann, Bernd ; Scholz, Andrea ; Gemming, Sibylle ; Potzger, Kay

  • Author_Institution
    Inst. of Ion-Beam Phys. & Mater. Res., Helmholtz-Zentrum Dresden - Rossendorf, Dresden, Germany
  • fYear
    2013
  • fDate
    26-27 Sept. 2013
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Polycrystalline rutile TiO2 thin films were prepared on Pt/Ti/SiO2/Si substrates by thermal oxidation of a 100nm thick titanium film at temperatures between 500°C and 800°C. We observed stable nonvolatile unipolar switching in the films oxidized at 600°C to 800°C. Retention measurements showed stable ON and OFF states for a time of at least 24h at room temperature, if there was a sufficient relaxation period between the switching event and the start of the read out process. Without any appropriate time, we observed an increase in resistance in the high resistance state (HRS) after the RESET process. In contrast, the low resistance state (LRS) did not show a time dependent resistance change after the SET process.
  • Keywords
    electric resistance; electrical conductivity transitions; electrical resistivity; oxidation; thin films; titanium compounds; Pt-Ti-SiO2-Si; Pt-Ti-silica-Si substrates; RESET process; Si; TiO2; high resistance state; low resistance state; polycrystalline rutile titania thin films; read out process; relaxation period; resistive switching; retention measurements; size 100 nm; stable OFF state; stable ON state; stable nonvolatile unipolar switching; switching event; temperature 500 degC to 800 degC; thermal oxidation; thermally oxidized titanium films; time dependent resistance change; Films; Gold; Optical switches; Oxidation; Resistance; Temperature measurement; TiO2; resistive switching; thermal oxidation retention;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Conference Dresden-Grenoble (ISCDG), 2013 International
  • Conference_Location
    Dresden
  • Print_ISBN
    978-1-4799-1250-6
  • Type

    conf

  • DOI
    10.1109/ISCDG.2013.6656318
  • Filename
    6656318