Title :
A 2.62 MHz 762 µW cascode amplifier in flexible a-IGZO thin-film technology for textile and wearable-electronics applications
Author :
Shabanpour, R. ; Ishida, K. ; Perumal, Charles ; Boroujeni, Bahman K. ; Meister, T. ; Carta, C. ; Ellinger, F. ; Petti, L. ; Munzenrieder, N. ; Salvatore, G.A. ; Troster, G.
Author_Institution :
Dept. of Circuit Design & Network Theor., Dresden Univ. of Technol., Dresden, Germany
Abstract :
This paper presents a cascode amplifier for bendable analog and radio-frequency electronic systems in a flexible amorphous indium gallium zinc oxide (a-IGZO) TFT technology, featuring a minimum gate length of 5 μm. The design is optimized for large bandwidth. The circuit design was carried out with a MOSFET LEVEL=3 SPICE model template. The required model parameters were extracted from both DC and AC measured characteristics. Measurements results show 10.5 dB of voltage gain and a 3 dB bandwidth of 2.62 MHz; the small-signal performance was closely predicted by simulations. The presented circuit provides the highest frequency of operation reported for a single-stage cascode amplifier in a-IGZO TFT technology to date.
Keywords :
II-VI semiconductors; MOSFET; amorphous semiconductors; flexible electronics; gallium compounds; indium compounds; radiofrequency amplifiers; thin film transistors; wide band gap semiconductors; zinc compounds; AC measured characteristics; DC measured characteristics; InGaZnO; MOSFET; SPICE model template; bendable analog electronic systems; circuit design; flexible amorphous indium gallium zinc oxide TFT technology; flexible thin-film technology; frequency 2.62 MHz; gain 10.5 dB; model parameter extraction; power 762 muW; radiofrequency electronic systems; single-stage cascode amplifier; size 5 mum; small-signal performance; textile electronics applications; wearable-electronics applications; Bandwidth; Frequency measurement; Gain; Gain measurement; Integrated circuit modeling; Thin film transistors; Voltage measurement; Analog circuit design; a-IGZO; bandwidth; cascode amplifier; device modeling; thin film transistors;
Conference_Titel :
Semiconductor Conference Dresden-Grenoble (ISCDG), 2013 International
Conference_Location :
Dresden
Print_ISBN :
978-1-4799-1250-6
DOI :
10.1109/ISCDG.2013.6656321
