M-S and M-O-S contacts to N-polar GaN on silicon (111) for UV photodetector application

Author

Szyszka, A. ; Lupina, L. ; Lupina, G. ; Malecha, K. ; Schroeder, Thomas

Author_Institution

IHP, Frankfurt (Oder), Germany

fYear

2013

fDate

26-27 Sept. 2013

Firstpage

1

Lastpage

3

Abstract

Various (Au, Pt, Ir) M-S and M-O-S type contact to N-polar GaN layer on Si(111) via oxide buffers were fabricated and characterized. The influence of rapid thermal annealing processes on electrical properties and contact morphology was examined. Iridium based contacts, annealed in 700 °C, exhibit lowest dark current (Φ_B = ~1.1 eV) and are thus identified as most suitable for UV photodetector applications.

Keywords

III-V semiconductors; MIS devices; Schottky barriers; dark conductivity; elemental semiconductors; gallium compounds; gold; iridium; materials preparation; photodetectors; platinum; rapid thermal annealing; semiconductor-metal boundaries; silicon; ultraviolet detectors; wide band gap semiconductors; Au; GaN; Ir; M-O-S contact; M-S contact; N-polar GaN layer; Pt; Si; UV photodetector application; contact morphology; dark current; electrical properties; iridium based contacts; oxide buffers; rapid thermal annealing processes; temperature 700 degC; Annealing; Contacts; Detectors; Gallium nitride; Gold; Leakage currents; Schottky contacts; gallium nitride; metal-semiconductor-metal detector;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference Dresden-Grenoble (ISCDG), 2013 International

Conference_Location

Dresden

Print_ISBN

978-1-4799-1250-6

Type

conf

DOI

10.1109/ISCDG.2013.6656323

Filename

6656323