Title :
M-S and M-O-S contacts to N-polar GaN on silicon (111) for UV photodetector application
Author :
Szyszka, A. ; Lupina, L. ; Lupina, G. ; Malecha, K. ; Schroeder, Thomas
Author_Institution :
IHP, Frankfurt (Oder), Germany
Abstract :
Various (Au, Pt, Ir) M-S and M-O-S type contact to N-polar GaN layer on Si(111) via oxide buffers were fabricated and characterized. The influence of rapid thermal annealing processes on electrical properties and contact morphology was examined. Iridium based contacts, annealed in 700 °C, exhibit lowest dark current (ΦB = ~1.1 eV) and are thus identified as most suitable for UV photodetector applications.
Keywords :
III-V semiconductors; MIS devices; Schottky barriers; dark conductivity; elemental semiconductors; gallium compounds; gold; iridium; materials preparation; photodetectors; platinum; rapid thermal annealing; semiconductor-metal boundaries; silicon; ultraviolet detectors; wide band gap semiconductors; Au; GaN; Ir; M-O-S contact; M-S contact; N-polar GaN layer; Pt; Si; UV photodetector application; contact morphology; dark current; electrical properties; iridium based contacts; oxide buffers; rapid thermal annealing processes; temperature 700 degC; Annealing; Contacts; Detectors; Gallium nitride; Gold; Leakage currents; Schottky contacts; gallium nitride; metal-semiconductor-metal detector;
Conference_Titel :
Semiconductor Conference Dresden-Grenoble (ISCDG), 2013 International
Conference_Location :
Dresden
Print_ISBN :
978-1-4799-1250-6
DOI :
10.1109/ISCDG.2013.6656323
