Impact of back biasing on the effective mobility in UTBB FDSOI CMOS technology

Author

Ben-Akkez, I. ; Fenouillet-Beranger, C. ; Cros, A. ; Balestra, F. ; Ghibaudo, Gerard

Author_Institution

STMicroelectron., Crolles, France

fYear

2013

fDate

26-27 Sept. 2013

Firstpage

1

Lastpage

3

Abstract

In this work, the influence of back biasing on the effective mobility in Ultra Thin film and ultra thin Box Fully Depleted SOI devices is studied. The evolution of the carrier mobility with the effective field on large N & PMOS devices for thin (GO1) and thick gate oxide (GO2) is investigated. The impact of surface roughness scattering at high electric on the effective mobility is also demonstrated for both interfaces. Simple one dimensional semi-classic simulation shows that conventional local electric mobility degradation law well explains the obtained results

Keywords

CMOS integrated circuits; MOSFET; carrier mobility; silicon-on-insulator; surface roughness; surface scattering; thin film circuits; NMOS devices; PMOS devices; UTBB FDSOI CMOS technology; back biasing; carrier mobility; conventional local electric mobility degradation; effective mobility; one dimensional semiclassic simulation; silicon on insulator; surface roughness scattering; thick gate oxide; thin gate oxide; ultrathin film-ultrathin box fully depleted SOI devices; Electric fields; Logic gates; MOS devices; Rough surfaces; Silicon; Silicon-on-insulator; Surface roughness; Effective mobility; UTB FDSOI; surface roughness;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference Dresden-Grenoble (ISCDG), 2013 International

Conference_Location

Dresden

Print_ISBN

978-1-4799-1250-6

Type

conf

DOI

10.1109/ISCDG.2013.6656324

Filename

6656324