Development and characterisation of 3D integration technologies for MEMS based on copper filled TSV´s and copper-to-copper metal thermo compression bonding

Author

Baum, Marcus ; Hofmann, Lutz ; Wiemer, M. ; Schulz, Stephan ; Gessner, T.

Author_Institution

Fraunhofer Inst. for Electron. Nanosyst. ENAS, Chemnitz, Germany

fYear

2013

fDate

26-27 Sept. 2013

Firstpage

1

Lastpage

4

Abstract

3D integration technologies show increasing importance for high volume applications while realizing the smallest system dimensions at least. Therefore vertical interconnect and wafer bonding technologies were optimized and adapted to reach a high yield using quite narrow contact areas and bond frames. These technologies must enable mechanical stable bonding with high degree of strength, hermeticity, and an electrical connection from all layers of the stack to the next level.

Keywords

copper; integrated circuit interconnections; micromechanical devices; three-dimensional integrated circuits; wafer bonding; 3D integration technology; MEMS; bond frames; contact areas; copper filled TSV; copper-to-copper metal thermo compression bonding; electrical connection; hermeticity; mechanical stable bonding; vertical interconnect; wafer bonding technology; Bonding; Copper; Materials; Metallization; Three-dimensional displays; Through-silicon vias; Wafer bonding; 3D Integration; TSV technologies; hermetic package; high aspect ratio interconnects; thermo compression bonding; wafer bonding;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference Dresden-Grenoble (ISCDG), 2013 International

Conference_Location

Dresden

Print_ISBN

978-1-4799-1250-6

Type

conf

DOI

10.1109/ISCDG.2013.6656329

Filename

6656329