Title :
Enclosed Layout Transistor with Active Region Cutout
Author :
Binzaid, Shuza ; Attia, John O. ; Schrimpf, Ron D.
Author_Institution :
Dept. of Electr. & Comput. Eng., Prairie View A&M Univ., Prairie View, TX
Abstract :
An enclosed-layout-transistor (ELT) is modified using the active region cutout (ARC) technique. This transistor is called ARCELT. 3-D simulations were performed to obtain the leakage current with respect to radiation induced charge density, while keeping the layout dimensions and process parameters unchanged, for a standard nMOS transistor, the ELT and the ARCELT. The aspect ratio W/L of ARCELT was found to be smaller than ELT. It is shown that the ARCELT has radiation tolerance similar to that of ELT. The ARCELT can be configured as a triple electrode MOSFET device that can be used to design compound transistors. Two applications of ARCELT as a compound transistor are shown.
Keywords :
MOSFET; electrodes; leakage currents; radiation effects; semiconductor device models; 3-D simulations; ARCELT transistor; active region cutout technique; compound transistors; enclosed-layout-transistor; leakage current; nMOS transistor; radiation induced charge density; triple electrode MOSFET device; Computational modeling; Electrodes; Fabrication; Leakage current; MOSFET circuits; Nanoscale devices; Radiation effects; Region 3; Semiconductor devices; Silicon;
Conference_Titel :
Region 5 Conference, 2008 IEEE
Conference_Location :
Kansas City, MO
Print_ISBN :
978-1-4244-2076-6
Electronic_ISBN :
978-1-4244-2077-3
DOI :
10.1109/TPSD.2008.4562742
