Title :
Present status and open issues of amorphous oxide semiconductor TFT technology
Author_Institution :
Qualcomm MEMS Technol. Inc., San Jose, CA, USA
Abstract :
We review the progress made to date on amorphous oxide semiconductor TFT technology. In addition, we discuss some remaining issues for manufacturing with the focus on the role of hydrogen impurity in amorphous oxide semiconductors.
Keywords :
amorphous semiconductors; thin film transistors; TFT technology; amorphous oxide semiconductor; hydrogen impurity; Active matrix liquid crystal displays; Active matrix organic light emitting diodes; Backplanes; Films; Hydrogen; Impurities; Thin film transistors;
Conference_Titel :
Photonics Conference (IPC), 2013 IEEE
Conference_Location :
Bellevue, WA
Print_ISBN :
978-1-4577-1506-8
DOI :
10.1109/IPCon.2013.6656342
