Title :
BCD (Bipolar-CMOS-DMOS) technology trends for power management IC
Author :
Park, Il-Yong ; Choi, Yong-Keon ; Ko, Kwang-Young ; Shim, Sang-Chul ; Jun, Bon-Keun ; Moon, Nam-Chil ; Kim, Nam-Joo ; Yoo, Kwang-Dong
Author_Institution :
Dongbu HiTek, Buchoen, South Korea
fDate :
May 30 2011-June 3 2011
Abstract :
This paper reviews the technology trends of BCD (Bipolar-CMOS-DMOS) technology in terms of voltage capability, switching speed of power transistor, and high integration of logic CMOS for SoC (System-on-Chip) solution requiring high-voltage devices. Recent trends such like modularity of the process, power metal routing, and high-density NVM (Non-Volatile Memory) are also discussed.
Keywords :
CMOS integrated circuits; bipolar integrated circuits; power transistors; BCD technology; SoC; bipolar-CMOS-DMOS technology; high-density NVM; high-density nonvolatile memory; logic CMOS; power management IC; power metal routing; power transistor; switching speed; system-on-chip; voltage capability; CMOS integrated circuits; CMOS technology; DC-DC power converters; Lighting; Logic gates; Power transistors; Transistors; BCD (Bipolar-CMOS-DMOS); Breakdown voltage; LDMOS (lateral double-diffused MOS); Specific on-resistance;
Conference_Titel :
Power Electronics and ECCE Asia (ICPE & ECCE), 2011 IEEE 8th International Conference on
Conference_Location :
Jeju
Print_ISBN :
978-1-61284-958-4
Electronic_ISBN :
2150-6078
DOI :
10.1109/ICPE.2011.5944616
