BCD (Bipolar-CMOS-DMOS) technology trends for power management IC

Author

Park, Il-Yong ; Choi, Yong-Keon ; Ko, Kwang-Young ; Shim, Sang-Chul ; Jun, Bon-Keun ; Moon, Nam-Chil ; Kim, Nam-Joo ; Yoo, Kwang-Dong

Author_Institution

Dongbu HiTek, Buchoen, South Korea

fYear

2011

fDate

May 30 2011-June 3 2011

Firstpage

318

Lastpage

325

Abstract

This paper reviews the technology trends of BCD (Bipolar-CMOS-DMOS) technology in terms of voltage capability, switching speed of power transistor, and high integration of logic CMOS for SoC (System-on-Chip) solution requiring high-voltage devices. Recent trends such like modularity of the process, power metal routing, and high-density NVM (Non-Volatile Memory) are also discussed.

Keywords

CMOS integrated circuits; bipolar integrated circuits; power transistors; BCD technology; SoC; bipolar-CMOS-DMOS technology; high-density NVM; high-density nonvolatile memory; logic CMOS; power management IC; power metal routing; power transistor; switching speed; system-on-chip; voltage capability; CMOS integrated circuits; CMOS technology; DC-DC power converters; Lighting; Logic gates; Power transistors; Transistors; BCD (Bipolar-CMOS-DMOS); Breakdown voltage; LDMOS (lateral double-diffused MOS); Specific on-resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics and ECCE Asia (ICPE & ECCE), 2011 IEEE 8th International Conference on

Conference_Location

Jeju

ISSN

2150-6078

Print_ISBN

978-1-61284-958-4

Electronic_ISBN

2150-6078

Type

conf

DOI

10.1109/ICPE.2011.5944616

Filename

5944616