Title :
Thermal-Assisted Spin Transfer Torque Memory (STT-RAM) Cell Design Exploration
Author :
Li, Hai ; Xi, Haiwen ; Chen, Yiran ; Stricklin, John ; Wang, Xiaobin ; Zhang, Tong
Author_Institution :
Seagate Technol., Bloomington, MN
Abstract :
Thermal-assisted spin-transfer torque random access memory (STT-RAM) has been considered as a promising candidate of next-generation nonvolatile memory technology. We conducted finite element simulation on thermal dynamics in the programming process of thermal-assisted STT-RAM. Special attentions have been paid to the scalability and design space of the thermal-assist programming scheme by varying the memory element dimension and resistance-area product. We also provide systematic analysis and comparison between the thermal-assisted STT-RAM and standard STT-RAM. Discussions on the writeability and scalability of thermal-assisted STT-RAM are also conducted.
Keywords :
MRAM devices; finite element analysis; magnetoelectronics; MRAM; STT-RAM; finite element simulation; magnetic random access memory; memory element dimension; nonvolatile memory technology; programming process; random access memory; resistance-area product; scalability; thermal dynamics; thermal-assisted spin transfer torque memory; writeability; Current; Magnetic switching; Magnetic tunneling; Magnetization; Random access memory; Scalability; Space technology; Switches; Thermal conductivity; Torque; STT-RAM; thermal-assisted;
Conference_Titel :
VLSI, 2009. ISVLSI '09. IEEE Computer Society Annual Symposium on
Conference_Location :
Tampa, FL
Print_ISBN :
978-1-4244-4408-3
Electronic_ISBN :
978-0-7695-3684-2
DOI :
10.1109/ISVLSI.2009.17
