LPCVD conditions generating an intense homogeneous decomposition of silane in the temperature range of 500-630°C

Author

Cobianu, C. ; Cosmin, P. ; Plugaru, R. ; Dascalu, D. ; Holleman, J.

Author_Institution

Inst. of Microtechnol., Bucharest, Romania

Volume

1

fYear

1996

fDate

9-12 Oct 1996

Firstpage

249

Abstract

In this paper, the transition from homogeneous to heterogeneous kinetic regime is studied in the temperature range from 500 to 630°C in a hot wall LPCVD industrial reactor. A hyperbolic-type dependence of the threshold SiH₄ flow rate (generating a strong homogeneous reaction) as a function of total pressure (in the range of 0.4-1.3 torr) is obtained for the hot wall LPCVD tube in the whole temperature range investigated. For a SiH₄ flow rate kept constant and higher than a certain value (50 sccm), a weak dependence of the threshold partial pressure on the deposition temperature is obtained for temperatures higher than 550°C

Keywords

chemical vapour deposition; elemental semiconductors; pyrolysis; semiconductor growth; silicon; silicon compounds; 0.4 to 1.3 torr; 500 to 630 C; Si; SiH₄; SiH₄ flow rate; deposition temperature; heterogeneous kinetic regime; homogeneous decomposition; hot wall LPCVD industrial reactor; silane; threshold partial pressure; Chemical technology; Chemical vapor deposition; Crystallization; Grain size; Inductors; Microelectronics; Semiconductor films; Silicon; Temperature dependence; Temperature distribution;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 1996., International

Conference_Location

Sinaia

Print_ISBN

0-7803-3223-7

Type

conf

DOI

10.1109/SMICND.1996.557355

Filename

557355