Title :
LPCVD conditions generating an intense homogeneous decomposition of silane in the temperature range of 500-630°C
Author :
Cobianu, C. ; Cosmin, P. ; Plugaru, R. ; Dascalu, D. ; Holleman, J.
Author_Institution :
Inst. of Microtechnol., Bucharest, Romania
Abstract :
In this paper, the transition from homogeneous to heterogeneous kinetic regime is studied in the temperature range from 500 to 630°C in a hot wall LPCVD industrial reactor. A hyperbolic-type dependence of the threshold SiH4 flow rate (generating a strong homogeneous reaction) as a function of total pressure (in the range of 0.4-1.3 torr) is obtained for the hot wall LPCVD tube in the whole temperature range investigated. For a SiH4 flow rate kept constant and higher than a certain value (50 sccm), a weak dependence of the threshold partial pressure on the deposition temperature is obtained for temperatures higher than 550°C
Keywords :
chemical vapour deposition; elemental semiconductors; pyrolysis; semiconductor growth; silicon; silicon compounds; 0.4 to 1.3 torr; 500 to 630 C; Si; SiH4; SiH4 flow rate; deposition temperature; heterogeneous kinetic regime; homogeneous decomposition; hot wall LPCVD industrial reactor; silane; threshold partial pressure; Chemical technology; Chemical vapor deposition; Crystallization; Grain size; Inductors; Microelectronics; Semiconductor films; Silicon; Temperature dependence; Temperature distribution;
Conference_Titel :
Semiconductor Conference, 1996., International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-3223-7
DOI :
10.1109/SMICND.1996.557355
