• DocumentCode
    2110697
  • Title

    Rapid melt grown germanium gate photoMOSFET on a silicon waveguide

  • Author

    Going, Ryan ; Tsu-Jae King Liu ; Wu, Ming C.

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., Univ. of California, Berkeley, Berkeley, CA, USA
  • fYear
    2013
  • fDate
    8-12 Sept. 2013
  • Firstpage
    38
  • Lastpage
    39
  • Abstract
    We demonstrate the first monocrystalline germanium gate photoMOSFET integrated with silicon photonic waveguides and grating coupler. We measure a responsivity of 1.2 A/W at 1550nm with a 2×4 μm2 germanium gate.
  • Keywords
    MOSFET; crystal growth from melt; diffraction gratings; elemental semiconductors; germanium; integrated optics; integrated optoelectronics; optical couplers; optical waveguides; silicon; Ge; Si; grating coupler; monocrystalline germanium gate; photoMOSFET; rapid melting; responsivity; silicon photonic waveguides; Couplers; Germanium; Logic gates; Optical waveguides; Silicon; Threshold voltage; Voltage measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photonics Conference (IPC), 2013 IEEE
  • Conference_Location
    Bellevue, WA
  • Print_ISBN
    978-1-4577-1506-8
  • Type

    conf

  • DOI
    10.1109/IPCon.2013.6656355
  • Filename
    6656355
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2110697