Design of electroabsorption modulator based on Ge/SiGe multiple quantum wells, integrated on SOI waveguides

Author

Rouifed, Mohamed Said ; Chaisakul, Papichaya ; Marris-Morini, D. ; Frigerio, Jacopo ; Isella, Giovanni ; Chrastina, D. ; Vivien, L.

Author_Institution

Inst. d´Electron. Fondamentale, Univ. Paris-Sud, Orsay, France

fYear

2013

fDate

8-12 Sept. 2013

Firstpage

40

Lastpage

41

Abstract

An eigenmode expansion method is used to model and optimize optical couplers between SOI waveguides and Ge/SiGe devices. Electroabsorption modulator performances are estimated in term of extinction ratio and insertion losses.

Keywords

Ge-Si alloys; electro-optical modulation; electroabsorption; elemental semiconductors; extinction coefficients; germanium; integrated optoelectronics; optical couplers; optical design techniques; optical losses; optical waveguides; semiconductor quantum wells; silicon-on-insulator; Ge-SiGe; Si; eigenmode expansion method; electroabsorption modulator; extinction ratio; insertion losses; integrated SOI waveguides; multiple quantum wells; optimized optical couplers; Couplers; Couplings; Modulation; Optical coupling; Optical waveguides; Silicon; Silicon germanium; SOI platform; Silicon; germanium; modulator; waveguide;

fLanguage

English

Publisher

ieee

Conference_Titel

Photonics Conference (IPC), 2013 IEEE

Conference_Location

Bellevue, WA

Print_ISBN

978-1-4577-1506-8

Type

conf

DOI

10.1109/IPCon.2013.6656356

Filename

6656356