DocumentCode :
2110916
Title :
Two-dimensional Modeling Of Self-aligned Silicide Process With A General-purpose Process Simulater OPUS
Author :
Kai, K. ; Kuroda, S. ; Nishi, K.
Author_Institution :
OKI Electric Industry Co., Ltd.
fYear :
1993
fDate :
14-15 May 1993
Firstpage :
66
Lastpage :
67
Keywords :
Analytical models; Electric resistance; Equations; MOSFET circuits; Research and development; Silicides; Silicon; Simulated annealing; Surfaces; Very large scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Process and Device Modeling, 1993. (1993 VPAD) 1993 International Workshop on
Print_ISBN :
0-7803-1338-0
Type :
conf
DOI :
10.1109/VPAD.1993.724725
Filename :
724725
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2110916
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