Thermal Stability of Amorphous InGaZnO Thin-Film Transistors With Different Oxygen-Contained Active Layers

Author

Zhe Hu ; Chengyuan Dong ; Daxiang Zhou ; Yuting Chen ; Jie Wu ; Haiting Xie ; Cheng-Lung Chiang ; Po-Lin Chen ; Tzu-Chieh Lai ; Chang-Cheng Lo ; Lien, Alan

Author_Institution

Dept. of Electron. Eng., Shanghai Jiao Tong Univ., Shanghai, China

Volume

11

Issue

7

fYear

2015

fDate

Jul-15

Firstpage

610

Lastpage

614

Abstract

Effect of the oxygen flow rate for active-layer deposition on the thermal stability of amorphous InGaZnO thin film transistors (a-IGZO TFTs) was investigated. The transfer characteristics of a-IGZO TFTs were measured at temperatures ranging from 298 to 398 K and a simple analytical model was used to relate the threshold voltage (Vth) decrease with increasing temperature to the formation of the point defects in a-IGZO films. Lower oxygen flow rate for active-layer deposition was proved to improve the thermal stability of a-IGZO TFTs, as was confirmed to be due to the increase in defect formation energy with the oxygen flow rate decreasing by the related theoretical analysis and XPS measurements.

Keywords

X-ray photoelectron spectra; amorphous semiconductors; gallium compounds; indium compounds; oxygen; thermal stability; thin film transistors; vapour deposition; zinc compounds; InGaZnO; XPS measurement; a-IGZO TFT; active-layer deposition; amorphous indium gallium zinc oxide; oxygen flow rate; oxygen-contained active layer; point defect formation; temperature 298 K to 398 K; thermal stability; thin-film transistor; threshold voltage; Films; Logic gates; Stability analysis; Temperature; Temperature measurement; Thermal stability; Thin film transistors; Amorphous InGaZnO (a-IGZO); oxygen vacancy; thermal stability; thin-film transistor (TFT);

fLanguage

English

Journal_Title

Display Technology, Journal of

Publisher

ieee

ISSN

1551-319X

Type

jour

DOI

10.1109/JDT.2015.2421934

Filename

7084096