Title :
High performance superluminescent diode with InAs quantum-dashes and chirped AlGaInAs barriers active region
Author :
Khan, M.Z.M. ; Majid, Mazlina A. ; Ng, Tien Khee ; Ooi, Boon S.
Author_Institution :
Photonics Lab., King Abdullah Univ. of Sci. & Technol. (KAUST), Thuwal, Saudi Arabia
Abstract :
The demonstration of high power, ultra-low ripple superluminescent diode using multiple quantum-dash-in-a-well layers with variable barrier thickness is reported. The device exhibits >20 mW power, <;0.3dB ripple, and >80 nm 3dB bandwidth at ~1.55 μm.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; quantum well devices; superluminescent diodes; InAs-AlGaInAs; barrier thickness; chirped barrier active region; high power ultralow ripple superluminescent diode; multiple quantum-dash-in-a-well layers; wavelength 1.55 mum; Bandwidth; Broadband communication; Chirp; Optical sensors; Quantum cascade lasers; Quantum dots; Superluminescent diodes;
Conference_Titel :
Photonics Conference (IPC), 2013 IEEE
Conference_Location :
Bellevue, WA
Print_ISBN :
978-1-4577-1506-8
DOI :
10.1109/IPCon.2013.6656386
