DocumentCode
2111486
Title
High performance superluminescent diode with InAs quantum-dashes and chirped AlGaInAs barriers active region
Author
Khan, M.Z.M. ; Majid, Mazlina A. ; Ng, Tien Khee ; Ooi, Boon S.
Author_Institution
Photonics Lab., King Abdullah Univ. of Sci. & Technol. (KAUST), Thuwal, Saudi Arabia
fYear
2013
fDate
8-12 Sept. 2013
Firstpage
95
Lastpage
96
Abstract
The demonstration of high power, ultra-low ripple superluminescent diode using multiple quantum-dash-in-a-well layers with variable barrier thickness is reported. The device exhibits >20 mW power, <;0.3dB ripple, and >80 nm 3dB bandwidth at ~1.55 μm.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; quantum well devices; superluminescent diodes; InAs-AlGaInAs; barrier thickness; chirped barrier active region; high power ultralow ripple superluminescent diode; multiple quantum-dash-in-a-well layers; wavelength 1.55 mum; Bandwidth; Broadband communication; Chirp; Optical sensors; Quantum cascade lasers; Quantum dots; Superluminescent diodes;
fLanguage
English
Publisher
ieee
Conference_Titel
Photonics Conference (IPC), 2013 IEEE
Conference_Location
Bellevue, WA
Print_ISBN
978-1-4577-1506-8
Type
conf
DOI
10.1109/IPCon.2013.6656386
Filename
6656386
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