New intelligent power module with silicon carbide diode

Author

Lee, A. Min-Sub ; Lee, B. Jun-Ho ; Jin, C. Bum-Seung ; Lee, D. Jun-Bae ; Chung, E. Dae-Woong ; Frank, F. Wolfgang

Author_Institution

LS Power Semitech, Seoul, South Korea

fYear

2011

fDate

May 30 2011-June 3 2011

Firstpage

1083

Lastpage

1086

Abstract

This paper presents a new CIPOS™ (Control Integrated POwer System) in DIL (Dual-in-line) package with transfer molded type, which combines with the features of Infineon SiC (silicon carbide diode), Infineon trench field stop technology IGBT and optimized Infineon SOI (Silicon On Insulator) gate driver to achieve the excellent solution for up to 3kW motor drives. By using SiC solution, better efficiency is realized for fast switching application. Especially, this module offers the smallest package size with high power density. This paper provides an overall description of the new CIPOS™ module as well as adopted SiC electrical characteristics, thermal performance, trench field stop technology IGBT and SOI gate driver.

Keywords

driver circuits; insulated gate bipolar transistors; motor drives; power semiconductor diodes; power system control; silicon compounds; silicon-on-insulator; wide band gap semiconductors; CIPOS module; IGBT; Infineon SOI; Infineon SiC; Infineon trench field stop technology; SiC; control integrated power system; dual-in-line package; gate driver; intelligent power module; motor drives; power 3 kW; silicon carbide diode; silicon on insulator; Insulated gate bipolar transistors; Logic gates; Schottky diodes; Silicon; Silicon carbide; Silicon on insulator technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics and ECCE Asia (ICPE & ECCE), 2011 IEEE 8th International Conference on

Conference_Location

Jeju

ISSN

2150-6078

Print_ISBN

978-1-61284-958-4

Electronic_ISBN

2150-6078

Type

conf

DOI

10.1109/ICPE.2011.5944658

Filename

5944658