• DocumentCode
    2111710
  • Title

    A comparative performance study of an interleaved boost converter using commercialized Si and SiC diodes for PV applications

  • Author

    Ho, C.N.M. ; Breuninger, H. ; Pettersson, S. ; Escobar, G. ; Canales, F.

  • Author_Institution
    Corp. Res., ABB Switzerland Ltd., Baden-Dattwil, Switzerland
  • fYear
    2011
  • fDate
    May 30 2011-June 3 2011
  • Firstpage
    1190
  • Lastpage
    1197
  • Abstract
    A performance comparison of an interleaved boost converter (IBC) using Si and SiC diodes for PV energy conversion systems is presented in this paper. Performance attributes under investigation include the device behavior, thermal requirement, system efficiency and power density. The interleaved boost converter is designed for sustaining the dc link voltage in the energy conversion system. Due to the absence of reverse recovery current in SiC Schottky diodes, low switching loss is generated in the diodes and the switches. This benefit causes higher system efficiency and lower cooling system design requirement. As a benefit, the volume and weight of the heatsink can be further reduced. Furthermore, behaviors of semiconductors and steady-state characteristics of IBC are discussed in the paper. The validity of the analyses is confirmed experimentally by using a 2.5 kW IBC prototype with wide power and input voltage operating range.
  • Keywords
    Schottky diodes; elemental semiconductors; heat sinks; photovoltaic power systems; power convertors; silicon; silicon compounds; wide band gap semiconductors; IBC prototype; Si diodes; SiC Schottky diodes; SiC diodes; dc link voltage; heat sink; interleaved boost converter; photovoltaic energy conversion systems; power 2.5 kW; power density; thermal requirement; Junctions; Schottky diodes; Silicon; Silicon carbide; Switches; Temperature; MOSFET; PV; Power semiconductor; SiC; diode; interleaved boost converter;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Electronics and ECCE Asia (ICPE & ECCE), 2011 IEEE 8th International Conference on
  • Conference_Location
    Jeju
  • ISSN
    2150-6078
  • Print_ISBN
    978-1-61284-958-4
  • Electronic_ISBN
    2150-6078
  • Type

    conf

  • DOI
    10.1109/ICPE.2011.5944662
  • Filename
    5944662