Dynamic characterization of 63 mQ, 1.2 kV, normally-off SiC VJFET

Author

Abuishmais, I. ; Undeland, T.

Author_Institution

Norwegian Univ. of Sci. & Technol., Trondheim, Norway

fYear

2011

fDate

May 30 2011-June 3 2011

Firstpage

1206

Lastpage

1210

Abstract

Enhancement-mode high voltage SiC VJFETs are available on market today. In this paper we present results of dynamic characterization of these devices. A standard double pulse test with clamped inductive load was used during this characterization. Switching times are registered and energy losses are calculated. The impact of driver circuitry on device performance is highlighted. A comparison between commercially available driver and an optimized driver is established here showing the dependency of switching losses of this device on driver circuit. When an optimized driver is used, a reduction of 80% and 70% in turn-off time and switching loss is observed, respectively.

Keywords

carbon compounds; driver circuits; high-voltage techniques; junction gate field effect transistors; silicon compounds; wide band gap semiconductors; SiC; clamped inductive load; driver circuit; dynamic characterization; energy loss; enhancement-mode high voltage SiC VJFET; resistance 63 mohm; standard double pulse test; switching time; turn-off time; voltage 1.2 kV; Capacitance; Driver circuits; Insulated gate bipolar transistors; Logic gates; Performance evaluation; Silicon carbide; Switches; Dynamic characterization; JFET; Semiconductor devices; SiC devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics and ECCE Asia (ICPE & ECCE), 2011 IEEE 8th International Conference on

Conference_Location

Jeju

ISSN

2150-6078

Print_ISBN

978-1-61284-958-4

Electronic_ISBN

2150-6078

Type

conf

DOI

10.1109/ICPE.2011.5944664

Filename

5944664