Title :
High performance MEMS 0.18μm RF- CMOS inductors
Author :
Yishay, R. Ben ; Stolyarova, S. ; Shapira, S. ; Nemirovsky, Y.
Author_Institution :
Dept. of Electr. Eng., Technion - Israel Inst. of Technol., Haifa
Abstract :
This work presents the fabrication and characterization of on-chip micromachined spiral inductors in a commercially available 0.18mum CMOS process provided by TOWER Semiconductors Ltd. It explores the possibility to reduce parasitic effects and extending high frequency performance by applying a maskless micromachining post processing to create fully integrated inductors, suspended over the substrate with inter-turn dielectric removed.
Keywords :
CMOS integrated circuits; inductors; micromachining; micromechanical devices; radiofrequency integrated circuits; MEMS; RF-CMOS inductors; inter-turn dielectric; maskless micromachining post processing; on-chip micromachined spiral inductors; size 0.18 mum; CMOS process; Conductivity; Frequency; Inductors; Micromechanical devices; Parasitic capacitance; Q factor; Silicon; Spirals; Substrates;
Conference_Titel :
Microwaves, Communications, Antennas and Electronic Systems, 2008. COMCAS 2008. IEEE International Conference on
Conference_Location :
Tel-Aviv
Print_ISBN :
978-1-4244-2097-1
Electronic_ISBN :
978-1-4244-2098-8
DOI :
10.1109/COMCAS.2008.4562816
