Title :
High density 50 kW SiC inverter systems using a JFET based six-pack power module
Author :
Han, Timothy Junghee ; Nagashima, Jim ; Kim, Sung Joon ; Kulkarni, Srikanth ; Barlow, Fred
Author_Institution :
Global Power Electron., Irvine, CA, USA
fDate :
May 30 2011-June 3 2011
Abstract :
Recent progress on Silicon Carbide (SiC) power devices has shown their better power conversion efficiency compared to Silicon power devices due to the significant reduction in both conduction and switching losses. Combined with their high operating junction temperature capability, six-pack SiC power modules have been developed for high reliable and compact power systems. This paper focuses on the development of a high efficiency and high temperature inverter based on fully integrated SiC power modules. The main topic includes the SiC power module design targeting on high temperature operation (Tj>;200°C), full three phase inverter design and prototype development, and the inverter evaluation. A liquid cooled SiC inverter prototype with a peak power rating of 50 kW has been developed and demonstrated. When tested at moderate load levels compared to the inverter rating, an efficiency of 98.5% is achieved by the initial prototype, which is higher than most Si inverters..
Keywords :
invertors; junction gate field effect transistors; power convertors; power semiconductor devices; silicon compounds; wide band gap semiconductors; JFET; SiC inverter systems; conduction loss; power 50 kW; power conversion; power devices; silicon carbide; six-pack power module; switching loss; temperature inverter; Inverters; JFETs; Logic gates; Silicon carbide; Substrates; Switches; Wires; High Power Inverter; High Temperature; Power Module; SiC JFET;
Conference_Titel :
Power Electronics and ECCE Asia (ICPE & ECCE), 2011 IEEE 8th International Conference on
Conference_Location :
Jeju
Print_ISBN :
978-1-61284-958-4
Electronic_ISBN :
2150-6078
DOI :
10.1109/ICPE.2011.5944668