DocumentCode
2112156
Title
Exciton dynamics in near-surface InGaN quantum wells coupled to colloidal nanocrystals
Author
Kopylov, O. ; Shirazi, R. ; Yvind, Kresten ; Kardynal, B.E.
Author_Institution
DTU Fotonik, Tech. Univ. of Denmark, Lyngby, Denmark
fYear
2013
fDate
8-12 Sept. 2013
Firstpage
147
Lastpage
148
Abstract
We study non-radiative energy transfer between InGaN quantum wells and colloidal InP nanocrystals separated by sub-10nm distance. A significant non-radiative energy transfer between the two layers is accompanied by reduced surface recombination in InGaN.
Keywords
III-V semiconductors; colloids; excitons; gallium compounds; indium compounds; nanostructured materials; semiconductor quantum wells; surface recombination; InGaN; InP; colloidal nanocrystals; exciton dynamics; near-surface quantum wells; nonradiative energy transfer; surface recombination; Absorption; Energy exchange; Gallium nitride; Nanocrystals; Radiative recombination; Surface treatment; InGaN quantum well; energy transfer; nanocrystals;
fLanguage
English
Publisher
ieee
Conference_Titel
Photonics Conference (IPC), 2013 IEEE
Conference_Location
Bellevue, WA
Print_ISBN
978-1-4577-1506-8
Type
conf
DOI
10.1109/IPCon.2013.6656415
Filename
6656415
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