Title :
Design of power amplifiers using high breakdown GaN HEMT devices
Author :
Shumaker, J. ; Ohoka, M. ; Ui, N.
Author_Institution :
Eudyna Devices USA Inc., San Jose, CA
Abstract :
Some applications of the new GaN HEMT technology have been demonstrated. Class AB allows either very wide bandwidth or very high power. Doherty produces very good efficiency that is correctable for acceptable linearity at high efficiency.
Keywords :
III-V semiconductors; gallium compounds; high electron mobility transistors; power amplifiers; wide band gap semiconductors; Doherty produces; GaN; class AB; high breakdown GaN HEMT devices; power amplifiers; Breakdown voltage; Broadband amplifiers; Electric breakdown; Gallium nitride; HEMTs; High power amplifiers; Power amplifiers; Power generation; Pulse amplifiers; Silicon carbide;
Conference_Titel :
Microwaves, Communications, Antennas and Electronic Systems, 2008. COMCAS 2008. IEEE International Conference on
Conference_Location :
Tel-Aviv
Print_ISBN :
978-1-4244-2097-1
Electronic_ISBN :
978-1-4244-2098-8
DOI :
10.1109/COMCAS.2008.4562830
