• DocumentCode
    2112166
  • Title

    Design of power amplifiers using high breakdown GaN HEMT devices

  • Author

    Shumaker, J. ; Ohoka, M. ; Ui, N.

  • Author_Institution
    Eudyna Devices USA Inc., San Jose, CA
  • fYear
    2008
  • fDate
    13-14 May 2008
  • Firstpage
    1
  • Lastpage
    5
  • Abstract
    Some applications of the new GaN HEMT technology have been demonstrated. Class AB allows either very wide bandwidth or very high power. Doherty produces very good efficiency that is correctable for acceptable linearity at high efficiency.
  • Keywords
    III-V semiconductors; gallium compounds; high electron mobility transistors; power amplifiers; wide band gap semiconductors; Doherty produces; GaN; class AB; high breakdown GaN HEMT devices; power amplifiers; Breakdown voltage; Broadband amplifiers; Electric breakdown; Gallium nitride; HEMTs; High power amplifiers; Power amplifiers; Power generation; Pulse amplifiers; Silicon carbide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwaves, Communications, Antennas and Electronic Systems, 2008. COMCAS 2008. IEEE International Conference on
  • Conference_Location
    Tel-Aviv
  • Print_ISBN
    978-1-4244-2097-1
  • Electronic_ISBN
    978-1-4244-2098-8
  • Type

    conf

  • DOI
    10.1109/COMCAS.2008.4562830
  • Filename
    4562830
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2112166