TMOS novel uncooled sensors — theory and practice

Author

Gitelman, Leonid ; Gutman, Zivit ; Bar-Lev, Sharon ; Stolyarova, Sara ; Nemirovsky, Yael

Author_Institution

Dept. of Electr. Eng., Technion - Israel Inst. of Technol., Haifa

fYear

2008

fDate

13-14 May 2008

Firstpage

1

Lastpage

8

Abstract

This paper presents a novel approach, where the sensor is implemented as MOS transistor on SOI wafer, and is used as uncooled thermal detector (TMOS). The sensor is operated in subthreshold region where the current has exponential dependence on temperature with current sensitivities exceeding 4%/K. The fabrication of the sensor using standard and reliable CMOS-SOI technology combined with monolithic integration of readout circuitry and very simple post-processing, guaranties low production cost and predicts high performance.

Keywords

CMOS integrated circuits; silicon-on-insulator; temperature sensors; CMOS-SOI technology; MOS transistor; SOI wafer; monolithic integration; sensor; silicon on insulator; uncooled thermal detector; CMOS technology; Detectors; Fabrication; Integrated circuit reliability; MOSFETs; Monolithic integrated circuits; Production; Temperature dependence; Temperature sensors; Thermal sensors;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwaves, Communications, Antennas and Electronic Systems, 2008. COMCAS 2008. IEEE International Conference on

Conference_Location

Tel-Aviv

Print_ISBN

978-1-4244-2097-1

Electronic_ISBN

978-1-4244-2098-8

Type

conf

DOI

10.1109/COMCAS.2008.4562831

Filename

4562831