• DocumentCode
    2112188
  • Title

    Energy transfer in epitaxial Er2O3 thin films grown on Si(111) substrates

  • Author

    Tawara, T. ; Hozumi, T. ; Omi, H. ; Kaji, R. ; Adachi, Shuichi ; Gotoh, H. ; Sogawa, T.

  • Author_Institution
    NTT Basic Res. Labs., NTT Corp., Atsugi, Japan
  • fYear
    2013
  • fDate
    8-12 Sept. 2013
  • Firstpage
    149
  • Lastpage
    150
  • Abstract
    Time constants of a resonant energy transfer between Er ions in epitaxial Er2O3 grown on Si(111) are investigated for the coherent manipulation of populations and experimentally estimated to be several microseconds by resonant excitation photoluminescence.
  • Keywords
    epitaxial layers; erbium compounds; photoluminescence; Er2O3; Si; Si(111) substrates; coherent populations; epitaxial thin films; resonant energy transfer; resonant excitation photoluminescence; time constants; Energy exchange; Energy states; Erbium; Ions; Manifolds; Sociology; Statistics;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photonics Conference (IPC), 2013 IEEE
  • Conference_Location
    Bellevue, WA
  • Print_ISBN
    978-1-4577-1506-8
  • Type

    conf

  • DOI
    10.1109/IPCon.2013.6656416
  • Filename
    6656416
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2112188