Hybrid approach for RF MEMS devices

This work presents the RF design considerations of electro-mechanical MEMS structures realized by the hybrid approach. Modeling of the MEMS devices capacitance in up state is different than for surface micromachined devices, due to significant fringing fields. RF MEMS demonstrators as switch and inductor have been modeled, simulated and RF characterized. The fabrication of the hybrid devices has been performed using bulk micromachining of an SOI wafer, followed by a vertical integration with a GaAs and InP circuit substrates.