DocumentCode
2112595
Title
Design, modeling and fabrication of a CMOS compatible p-n junction avalanche photodiode
Author
Hossain, M. Mofazzal ; Ghasemi, Javad ; Zarkesh-Ha, Payman ; Hayat, Majeed M.
Author_Institution
Dept. of Electr. & Comput. Eng., Univ. of New Mexico, Albuquerque, NM, USA
fYear
2013
fDate
8-12 Sept. 2013
Firstpage
584
Lastpage
585
Abstract
CMOS compatible avalanche photodiode is designed, modeled and fabricated. Calculated mean gain, avalanche breakdown voltage, excess-noise factor, as well as the measured dark-current and spectral response are reported.
Keywords
CMOS integrated circuits; avalanche breakdown; avalanche photodiodes; dark conductivity; optical design techniques; optical fabrication; p-n junctions; semiconductor device models; CMOS compatible p-n junction avalanche photodiode; avalanche breakdown voltage; dark current; excess-noise factor; mean gain; optical design; optical fabrication; spectral response; Avalanche photodiodes; CMOS integrated circuits; Dark current; Ionization; Noise; Silicon; Voltage measurement; CMOS; avalanche photodiode; dead space; excess noise factor; impact ionization; ionization coefficients; silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Photonics Conference (IPC), 2013 IEEE
Conference_Location
Bellevue, WA
Print_ISBN
978-1-4577-1506-8
Type
conf
DOI
10.1109/IPCon.2013.6656429
Filename
6656429
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