DocumentCode
2113324
Title
A 16-element tunnel diode grid oscillator
Author
De Lisio, M.P. ; Davis, J.F. ; Shi-Jie Li ; Rutledge, D.B. ; Rosenberg, J.J.
Author_Institution
Dept. of Electr. Eng., California Inst. of Technol., Pasadena, CA, USA
Volume
2
fYear
1995
fDate
18-23 June 1995
Firstpage
1284
Abstract
A 16-channel tunnel diode grid oscillator has been fabricated. The grid oscillates at 1.86 GHz with an effective radiated power (ERP) of 1.3 mW. Frequency components were observed at multiples of one-third of the main frequency, but at power levels at least 16 dB lower. The average single-sideband (SSB) noise level was measured to be -76 dBc/Hz at an offset of 100 kHz from the carrier.
Keywords
UHF oscillators; resonant tunnelling diodes; tunnel diode oscillators; 1.3 mW; 1.86 GHz; 100 kHz; 16-channel tunnel diode grid oscillator; ERP; average single-sideband noise level; carrier; effective radiated power; frequency components; power levels; resonant tunneling diode; Educational institutions; Feedback; Frequency; Mesh generation; Oscillators; Planar arrays; Power generation; Resistors; Resonant tunneling devices; Schottky diodes;
fLanguage
English
Publisher
ieee
Conference_Titel
Antennas and Propagation Society International Symposium, 1995. AP-S. Digest
Conference_Location
Newport Beach, CA, USA
Print_ISBN
0-7803-2719-5
Type
conf
DOI
10.1109/APS.1995.530254
Filename
530254
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