DocumentCode
2113417
Title
InP membrane on silicon integration technology
Author
Smit, Meint K.
Author_Institution
COBRA Res. Inst., Tech. Univ. Eindhoven, Eindhoven, Netherlands
fYear
2013
fDate
8-12 Sept. 2013
Firstpage
637
Lastpage
638
Abstract
Integration of light sources in silicon photonics is usually done with an active InP-based layer stack on a silicon-based photonic circuit-layer. InP Membrane On Silicon (IMOS) technology integrates all functionality in a single InP-based layer.
Keywords
III-V semiconductors; indium compounds; integrated optics; light sources; membranes; silicon; IMOS; InP; InP membrane-on-silicon; Si; light sources; silicon integration technology; silicon photonics; Couplers; Indium phosphide; Lasers; Optical waveguides; Photonics; Silicon; Waveguide lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Photonics Conference (IPC), 2013 IEEE
Conference_Location
Bellevue, WA
Print_ISBN
978-1-4577-1506-8
Type
conf
DOI
10.1109/IPCon.2013.6656456
Filename
6656456
Link To Document