DocumentCode
2114075
Title
Design for Reliability of Wafer Level Packages
Author
van Driel, W.D. ; Hochstenbach, H.P. ; Zhang, G.Q.
Author_Institution
Philips Semicond., Nijmegen
fYear
2006
fDate
24-26 April 2006
Firstpage
1
Lastpage
6
Abstract
Wafer level packages are one of the most advanced packaging concepts. It combines the advantages of flip chip with conventional surface mount technologies. In recent years we have seen a tremendous growth in the application of wafer level packages, both in quantities as well as in the number of products where they are implemented. The technology is, however, not without it´s challenges with 1st and 2nd level reliability issues. For instance, the limit on the size of wafer level packages has to do with the 2nd level, or solder bump, reliability. This paper highlights our major research and development results on understanding and enhancing the 1st and 2nd level reliability of wafer level packages using combined experimental and virtual prototyping (thermal, mechanical and thermo-mechanical) techniques. Typical 1st level reliability problems within wafer level packages are cracking of repassivation materials, fatigue of bond over active pads, and cracks within the under bump metallisation. To investigate the physics of failure for these problems, dedicated parametric finite element models are constructed including the thin IC layers. Different repassivation materials and different structures are explored to their potential reliability benefits. By combining the experimental results with reliability prediction models and advanced simulation-based optimisation methods, the complete wafer level package design space in terms of distance from neutral point, PCB thickness, PCB copper layout, and use of improved structures is explored. Our numerical results explain the experimentally obtained reliability results for the effects of package size and PCB thickness. Even more, they indicate that by properly designing the copper layout in the PCB, a 10-20% improvement can be achieved for the WLP 2nd level reliability
Keywords
copper; fatigue cracks; finite element analysis; integrated circuit metallisation; integrated circuit packaging; integrated circuit reliability; PCB copper layout; PCB thickness; first level reliability; parametric finite element models; reliability prediction models; repassivation materials; second level reliability; under bump metallisation; virtual prototyping; wafer level packages; Copper; Flip chip; Integrated circuit modeling; Materials reliability; Packaging; Predictive models; Research and development; Semiconductor device modeling; Surface-mount technology; Wafer scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Thermal, Mechanical and Multiphysics Simulation and Experiments in Micro-Electronics and Micro-Systems, 2006. EuroSime 2006. 7th International Conference on
Conference_Location
Como
Print_ISBN
1-4244-0275-1
Type
conf
DOI
10.1109/ESIME.2006.1643961
Filename
1643961
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