Title :
Interfacial Adhesion Method for Semiconductor Applications Covering the Full Mode Mixity
Author :
Thijsse, J. ; van Driel, W.D. ; van Gils, M.A.J. ; van der Sluis, O.
Author_Institution :
Philips Appl. Technol., Eindhoven
Abstract :
Currently, prediction of interface strength is typically done using the critical energy release rate. Interface strength, however, is heavily dependent on mode mixity. Accurately predicting delamination therefore requires a material model that includes the mode dependency of interface strength. A novel test setup is designed which allows mixed mode delamination testing. The setup is a stabilized version of the mixed mode bending test previously described by Reeder and Crews (1990, 1991). It allows for the measurement of stable crack growth over the full range of mode mixities, using a single specimen design. The crack length, necessary for calculation of the energy release rate, is obtained from an analytical model. Crack length and displacement data are used in a finite element model containing a crack tip to calculate the mode mixity
Keywords :
adhesion; adhesive bonding; crack detection; delamination; finite element analysis; mechanical contact; wafer bonding; critical energy release rate; delamination prediction; full mode mixity; interface strength; interfacial adhesion method; mixed mode bending test; semiconductor applications; stable crack growth; Adhesives; Delamination; Equations; Gas insulated transmission lines; Integrated circuit packaging; Kinetic energy; Moisture; Predictive models; Semiconductor device packaging; Testing;
Conference_Titel :
Thermal, Mechanical and Multiphysics Simulation and Experiments in Micro-Electronics and Micro-Systems, 2006. EuroSime 2006. 7th International Conference on
Conference_Location :
Como
Print_ISBN :
1-4244-0275-1
DOI :
10.1109/ESIME.2006.1643963
