DocumentCode
2114186
Title
No-power vacuum actuated bi-stable MEMS SPDT switch
Author
Gowrishetty, Usha R. ; Walsh, Kevin M. ; Jackson, Doug
Author_Institution
Dept. of Electr. & Comput. Eng., Univ. of Louisville, Louisville, KY, USA
fYear
2010
fDate
1-4 Nov. 2010
Firstpage
1745
Lastpage
1749
Abstract
A "No-power" MEMS based vacuum/pressure actuated single pole double throw (SPDT) switch is presented. Compressive stresses in thermal oxide and TiW layer provide pre-stress in the polyimide mechanical films that initiates diaphragm buckling upon release. The diaphragms are bi-stable in nature with a buckling height greater than 28 μm. These bi stable diaphragms were incorporated into a MEMS based no power SPDT switch which comprises of 2 series single pole single throw (SPST) switches. Pressure/vacuum was used to actuate the diaphragms and OPEN/CLOSE the series SPST switches. The actuation or switching pressure/vacuum of the SPST switches was determined to be greater than 40 KPa which compares favorably with the analytical model predictions. The contact resistance of the MEMS SPST switches was determined to be less than 200 Ω. The proposed no-power switches are passive, programmable, monolithic, and small and can find several applications in the field of MEMS. Also, the polyimide diaphragms can be used as the fundamental building blocks in micro-pumps, micro-valves, optical devices and energy harvesting devices which require large cyclic displacement. Because of their bi-stable nature, the diaphragms can also be used for applications in mechanical memory storage.
Keywords
buckling; contact resistance; diaphragms; microswitches; titanium compounds; MEMS single pole double throw switch; TiW; buckling height; compressive stress; contact resistance; diaphragm buckling; energy harvesting devices; mechanical memory storage; no-power switches; polyimide mechanical films; vacuum actuated bi-stable MEMS;
fLanguage
English
Publisher
ieee
Conference_Titel
Sensors, 2010 IEEE
Conference_Location
Kona, HI
ISSN
1930-0395
Print_ISBN
978-1-4244-8170-5
Electronic_ISBN
1930-0395
Type
conf
DOI
10.1109/ICSENS.2010.5689886
Filename
5689886
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