Title :
On The Origin Of Tunneling Currents In Scaled Silicon Devices
Author :
Schenk, A. ; Krumbein, U. ; Muller, S. ; Dettmer, H. ; Fichtner, W.
Author_Institution :
Swiss Federal Institute of Technology
Keywords :
Character generation; Diodes; Doping; Erbium; MOSFETs; Photonic band gap; Semiconductor process modeling; Silicon devices; Temperature dependence; Tunneling;
Conference_Titel :
VLSI Process and Device Modeling, 1993. (1993 VPAD) 1993 International Workshop on
Print_ISBN :
0-7803-1338-0
DOI :
10.1109/VPAD.1993.724737
